Please use this identifier to cite or link to this item: https://doi.org/10.1002/inf2.12162
Title: Recent advances in resistive random access memory based on lead halide perovskite
Authors: Di, Jiayu
Du, Jianhui
Lin, Zhenhua
Liu, Shengzhong (Frank)
Ouyang, Jianyong 
Chang, Jingjing
Issue Date: 24-Nov-2020
Publisher: Blackwell Publishing Ltd
Citation: Di, Jiayu, Du, Jianhui, Lin, Zhenhua, Liu, Shengzhong (Frank), Ouyang, Jianyong, Chang, Jingjing (2020-11-24). Recent advances in resistive random access memory based on lead halide perovskite. InfoMat 3 (3) : 293-315. ScholarBank@NUS Repository. https://doi.org/10.1002/inf2.12162
Rights: Attribution 4.0 International
Abstract: Lead halide perovskites have attracted increasing attention in photovoltaic devices, light-emitting diodes, photodetectors, and other fields due to their excellent properties. Besides optoelectronic devices, growing numbers of studies have focused on the perovskite-based electrical devices in the past few years, such as transistors and resistive random access memories (RRAMs). Here, this article summarizes the recent progress the researchers have made of RRAM devices. Primarily, the working mechanism and the key parameters of RRAM are introduced. Generally, the working principles, including the conductive filament model (containing the types of the model of the metal cations-induced filament and the model of the ions migration in bulk), the interface effect, and the electronic effect are the origins of the RRAM behaviors, and hence, various factors that affect the device performance are explored. Then, RRAMs based on organolead halide perovskite and all-inorganic perovskite are discussed in terms of different structures, different compositions, and different fabrication methods. Finally, a brief conclusion and a broad outlook are given on the progress and challenges in the field of perovskite-based RRAMs. (Figure presented.). © 2021 The Authors. InfoMat published by UESTC and John Wiley & Sons Australia, Ltd
Source Title: InfoMat
URI: https://scholarbank.nus.edu.sg/handle/10635/233224
ISSN: 2567-3165
DOI: 10.1002/inf2.12162
Rights: Attribution 4.0 International
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