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Title: Field-free magnetization switching induced by the unconventional spin-orbit torque from WTe2
Authors: Xie, Qidong 
Lin, Weinan 
Sarkar, Soumya 
Shu, Xinyu
Chen, Shaohai 
Liu, Liang 
Zhao, Tieyang
Zhou, Chenghang 
Wang, Han
Zhou, Jing 
Grade?ak, Silvija 
Chen, Jingsheng 
Issue Date: 1-May-2021
Publisher: American Institute of Physics Inc.
Citation: Xie, Qidong, Lin, Weinan, Sarkar, Soumya, Shu, Xinyu, Chen, Shaohai, Liu, Liang, Zhao, Tieyang, Zhou, Chenghang, Wang, Han, Zhou, Jing, Grade?ak, Silvija, Chen, Jingsheng (2021-05-01). Field-free magnetization switching induced by the unconventional spin-orbit torque from WTe2. APL Materials 9 (5) : 051114. ScholarBank@NUS Repository.
Rights: Attribution 4.0 International
Abstract: Spin-orbit torque provides a highly efficient way to achieve current-induced magnetization switching, which relies on charge-to-spin conversion of the spin source layer. However, in the conventional heavy metal/ferromagnetic layer, the generated spin-orbit torque is limited to in-plane, which cannot deterministically switch the perpendicularly magnetized ferromagnets, and thus impedes practical application for high-density magnetic memory. In this work, deterministic switching of perpendicular magnetization is achieved in the SrRuO3/WTe2 bilayer structure, which is attributed to the out-of-plane spin polarization originated from the van der Waals material WTe2. The out-of-plane spin polarization is further confirmed by the shift of the anomalous Hall effect loop. Spin polarization matrix analysis indicates that the reduced crystal symmetry in WTe2 is responsible for the out-of-plane spin polarization. © 2021 Author(s).
Source Title: APL Materials
ISSN: 2166-532X
DOI: 10.1063/5.0048926
Rights: Attribution 4.0 International
Appears in Collections:Staff Publications

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