Please use this identifier to cite or link to this item:
Title: Review of Si-based GeSn CVD growth and optoelectronic applications
Authors: Miao, Yuanhao
Wang, Guilei
Kong, Zhenzhen
Xu, Buqing
Zhao, Xuewei
Luo, Xue
Lin, Hongxiao
Dong, Yan
Lu, Bin
Dong, Linpeng
Zhou, Jiuren 
Liu, Jinbiao
Radamson, Henry H.
Keywords: CVD
Issue Date: 29-Sep-2021
Publisher: MDPI
Citation: Miao, Yuanhao, Wang, Guilei, Kong, Zhenzhen, Xu, Buqing, Zhao, Xuewei, Luo, Xue, Lin, Hongxiao, Dong, Yan, Lu, Bin, Dong, Linpeng, Zhou, Jiuren, Liu, Jinbiao, Radamson, Henry H. (2021-09-29). Review of Si-based GeSn CVD growth and optoelectronic applications. Nanomaterials 11 (10) : 2556. ScholarBank@NUS Repository.
Rights: Attribution 4.0 International
Abstract: GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
Source Title: Nanomaterials
ISSN: 2079-4991
DOI: 10.3390/nano11102556
Rights: Attribution 4.0 International
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
10_3390_nano11102556.pdf12.56 MBAdobe PDF



Google ScholarTM



This item is licensed under a Creative Commons License Creative Commons