Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41467-021-25864-1
Title: Carrier transport theory for twisted bilayer graphene in the metallic regime
Authors: Sharma, Girish 
Yudhistira, Indra 
Chakraborty, Nilotpal 
Ho, Derek YH
Al Ezzi, MM
Fuhrer, Michael S
Vignale, Giovanni 
Adam, Shaffique 
Keywords: Science & Technology
Multidisciplinary Sciences
Science & Technology - Other Topics
MAGIC-ANGLE
ELECTRON INTERACTIONS
SUPERCONDUCTIVITY
Issue Date: 30-Sep-2021
Publisher: NATURE PORTFOLIO
Citation: Sharma, Girish, Yudhistira, Indra, Chakraborty, Nilotpal, Ho, Derek YH, Al Ezzi, MM, Fuhrer, Michael S, Vignale, Giovanni, Adam, Shaffique (2021-09-30). Carrier transport theory for twisted bilayer graphene in the metallic regime. NATURE COMMUNICATIONS 12 (1). ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-021-25864-1
Abstract: Understanding the normal-metal state transport in twisted bilayer graphene near magic angle is of fundamental importance as it provides insights into the mechanisms responsible for the observed strongly correlated insulating and superconducting phases. Here we provide a rigorous theory for phonon-dominated transport in twisted bilayer graphene describing its unusual signatures in the resistivity (including the variation with electron density, temperature, and twist angle) showing good quantitative agreement with recent experiments. We contrast this with the alternative Planckian dissipation mechanism that we show is incompatible with available experimental data. An accurate treatment of the electron-phonon scattering requires us to go well beyond the usual treatment, including both intraband and interband processes, considering the finite-temperature dynamical screening of the electron-phonon matrix element, and going beyond the linear Dirac dispersion. In addition to explaining the observations in currently available experimental data, we make concrete predictions that can be tested in ongoing experiments.
Source Title: NATURE COMMUNICATIONS
URI: https://scholarbank.nus.edu.sg/handle/10635/226732
ISSN: 20411723
20411723
DOI: 10.1038/s41467-021-25864-1
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