Please use this identifier to cite or link to this item: https://doi.org/10.1039/c8ra09069f
Title: Monolayer black phosphorus by sequential wet-chemical surface oxidation
Authors: Wild, S.
Lloret, V.
Vega-Mayoral, V.
Vella, D. 
Nuin, E.
Siebert, M.
Kolesnik-Gray, M.
Löffler, M.
Mayrhofer, K.J.J.
Gadermaier, C.
Krstic, V.
Hauke, F.
Abellán, G.
Hirsch, A.
Issue Date: 2019
Publisher: Royal Society of Chemistry
Citation: Wild, S., Lloret, V., Vega-Mayoral, V., Vella, D., Nuin, E., Siebert, M., Kolesnik-Gray, M., Löffler, M., Mayrhofer, K.J.J., Gadermaier, C., Krstic, V., Hauke, F., Abellán, G., Hirsch, A. (2019). Monolayer black phosphorus by sequential wet-chemical surface oxidation. RSC Advances 9 (7) : 3570-3576. ScholarBank@NUS Repository. https://doi.org/10.1039/c8ra09069f
Rights: Attribution-NonCommercial 4.0 International
Abstract: We report a straightforward chemical methodology for controlling the thickness of black phosphorus flakes down to the monolayer limit by layer-by-layer oxidation and thinning, using water as solubilizing agent. Moreover, the oxidation process can be stopped at will by two different passivation procedures, namely the non-covalent functionalization with perylene diimide chromophores, which prevents the photooxidation, or by using a protective ionic liquid layer. The obtained flakes preserve their electronic properties as demonstrated by fabricating a BP field-effect transistor (FET). This work paves the way for the preparation of BP devices with controlled thickness. © The Royal Society of Chemistry.
Source Title: RSC Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/214003
ISSN: 2046-2069
DOI: 10.1039/c8ra09069f
Rights: Attribution-NonCommercial 4.0 International
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