Please use this identifier to cite or link to this item: https://doi.org/10.1126/sciadv.aba2773
Title: The effect of moiré superstructures on topological edge states in twisted bismuthene homojunctions
Authors: Gou, J. 
Kong, L.
He, X. 
Huang, Y.L. 
Sun, J.
Meng, S.
Wu, K.
Chen, L.
Wee, A.T.S. 
Issue Date: 3-Jun-2020
Publisher: American Association for the Advancement of Science
Citation: Gou, J., Kong, L., He, X., Huang, Y.L., Sun, J., Meng, S., Wu, K., Chen, L., Wee, A.T.S. (2020-06-03). The effect of moiré superstructures on topological edge states in twisted bismuthene homojunctions. Science Advances 6 (23) : EABA2773. ScholarBank@NUS Repository. https://doi.org/10.1126/sciadv.aba2773
Rights: Attribution-NonCommercial 4.0 International
Abstract: Creating and controlling the topological properties of two-dimensional topological insulators is essential for spintronic device applications. Here, we report the successful growth of bismuth homostructure consisting of monolayer bismuthene and single-layer black phosphorus-like Bi (BP-Bi) on the HOPG surface. Combining scanning tunneling microscopy/spectroscopy with noncontact atomic force microscopy, moiré superstructures with twist angles in the bismuth homostructure and the modulation of topological edge states of bismuthene were observed and studied. First-principles calculations reproduced the moiré superlattice and indicated that the structure fluctuation is ascribed to the stacking modes between bismuthene and BP-Bi, which induce spatially distributed interface interactions in the bismuth homostructure. The modulation of topological edge states is directly related to the variation of interlayer interactions. Our results suggest a promising pathway to tailor the topological states through interfacial interactions. © 2020 The Authors.
Source Title: Science Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/198587
ISSN: 23752548
DOI: 10.1126/sciadv.aba2773
Rights: Attribution-NonCommercial 4.0 International
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