Integration of MEMS IR detectors with MIR waveguides for sensing applications

Abstract

Waveguides have been utilized for label-free and miniaturized mid-infrared gas sensors that operate on the evanescent field absorption principle. For integrated systems, photodetectors based on the photocarrier generation principle are previously integrated with waveguides. However, due to the thermal excitation of carriers at room temperature, they suffer from large dark currents and noise in the long-wavelength region. In this paper, we introduce the integration of a MEMS-based broadband infrared thermopile sensor with mid-infrared waveguides via flip-chip bonding technology and demonstrate a proof-of-concept gas (N O) sensor working at 3.9 µm. A photonic device with input and output grating couplers designed at 3.72 µm was fabricated on a silicon-on-insulator (SOI) platform and integrated with a bare thermopile chip on its output side via flip-chip bonding in order to realize an integrated photonic platform for a myriad range of sensing applications. A responsivity of 69 mV/W was measured at 3.72 µm for an 11 mm waveguide. A second device designed at 3.9 µm has a 1800 ppm resolution for N O sensing. 2 2