Please use this identifier to cite or link to this item: https://doi.org/10.1021/acsnano.9b08916
Title: Direct Growth of Wafer-Scale, Transparent, p‑Type Reduced-Graphene-Oxide-like Thin Films by Pulsed Laser Deposition
Authors: M. M. Juvaid 
Soumya Sarkar 
Pranjal Kumar Gogoi 
Siddhartha Ghosh 
Meenakshi Annamalai 
Yung-Chang Lin
Saurav Prakash 
Sreetosh Goswami 
Changjian Li 
Sonu Hooda
Hariom Jani 
Mark B. H. Breese 
Andrivo Rusydi 
Stephen John Pennycook 
Kazu Suenaga
M. S. Ramachandra Rao
Thirumalai Venkatesan 
Keywords: reduced-graphene-oxide-like thin films
pulsed laser deposition
wafer-scale growth
transparent conducting oxides
optoelectronics
Issue Date: 26-Feb-2020
Publisher: American Chemical Society
Citation: M. M. Juvaid, Soumya Sarkar, Pranjal Kumar Gogoi, Siddhartha Ghosh, Meenakshi Annamalai, Yung-Chang Lin, Saurav Prakash, Sreetosh Goswami, Changjian Li, Sonu Hooda, Hariom Jani, Mark B. H. Breese, Andrivo Rusydi, Stephen John Pennycook, Kazu Suenaga, M. S. Ramachandra Rao, Thirumalai Venkatesan (2020-02-26). Direct Growth of Wafer-Scale, Transparent, p‑Type Reduced-Graphene-Oxide-like Thin Films by Pulsed Laser Deposition. ACS Nano 14 (3) : 3290 - 3298. ScholarBank@NUS Repository. https://doi.org/10.1021/acsnano.9b08916
Abstract: Reduced graphene oxide (rGO) has attracted significant interest in an array of applications ranging from flexible optoelectronics, energy storage, sensing, and very recently as membranes for water purification. Many of these applications require a reproducible, scalable process for the growth of large-area films of high optical and electronic quality. In this work, we report a one-step scalable method for the growth of reduced-graphene-oxide-like (rGO-like) thin films via pulsed laser deposition (PLD) of sp2 carbon in an oxidizing environment. By deploying an appropriate laser beam scanning technique, we are able to deposit wafer-scale uniform rGO-like thin films with ultrasmooth surfaces (roughness <1 nm). Further, in situ control of the growth environment during the PLD process allows us to tailor its hybrid sp2–sp3 electronic structure. This enables us to control its intrinsic optoelectronic properties and helps us achieve some of the lowest extinction coefficients and refractive index values (0.358 and 1.715, respectively, at 2.236 eV) as compared to chemically grown rGO films. Additionally, the transparency and conductivity metrics of our PLD grown thin films are superior to other p-type rGO films and conducting oxides. Unlike chemical methods, our growth technique is devoid of catalysts and is carried out at lower process temperatures. This would enable the integration of these thin films with a wide range of material heterostructures via direct growth.
Source Title: ACS Nano
URI: https://scholarbank.nus.edu.sg/handle/10635/189120
ISSN: 1936086X
DOI: 10.1021/acsnano.9b08916
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