Please use this identifier to cite or link to this item: https://doi.org/10.1002/advs.202000729
Title: Atomic Origin of Interface-Dependent Oxygen Migration by Electrochemical Gating at the LaAlO3-SrTiO3 Heterointerface
Authors: Dongsheng Song 
Deqing Xue
Shengwei Zeng 
Changjian Li 
Thirumalai Venkatesan 
Ariando Ariando 
Stephen J. Pennycook 
Keywords: electrochemical gating
ionic liquid gating
LaAlO3/SrTiO3
oxygen migration
Issue Date: 28-Jun-2020
Publisher: WILEY
Citation: Dongsheng Song, Deqing Xue, Shengwei Zeng, Changjian Li, Thirumalai Venkatesan, Ariando Ariando, Stephen J. Pennycook (2020-06-28). Atomic Origin of Interface-Dependent Oxygen Migration by Electrochemical Gating at the LaAlO3-SrTiO3 Heterointerface. Advanced Science 7 (15). ScholarBank@NUS Repository. https://doi.org/10.1002/advs.202000729
Abstract: Electrical control of material properties based on ionic liquids (IL) has seen great development and emerging applications in the field of functional oxides, mainly understood by the electrostatic and electrochemical gating mechanisms. Compared to the fast, flexible, and reproducible electrostatic gating, electrochemical gating is less controllable owing to the complex behaviors of ion migration. Here, the interface-dependent oxygen migration by electrochemical gating is resolved at the atomic scale in the LaAlO3-SrTiO3 system through ex situ IL gating experiments and on-site atomic-resolution characterization. The difference between interface structures leads to the controllable electrochemical oxygen migration by filling oxygen vacancies. The findings not only provide an atomic-scale insight into the origin of interface-dependent electrochemical gating but also demonstrate an effective way of engineering interface structure to control the electrochemical gating.
Source Title: Advanced Science
URI: https://scholarbank.nus.edu.sg/handle/10635/188022
ISSN: 21983844
DOI: 10.1002/advs.202000729
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