Please use this identifier to cite or link to this item: https://doi.org/10.3762/bjnano.6.93
Title: Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
Authors: Telychko, M 
Berger, J
Majzik, Z
Jelínek, P
Svec, M
Keywords: Atomic force microscopy
Carbon
Electron scattering
Silicon carbide
AFM
Dynamic atomic force microscopy
Electronic contributions
Room temperature
SiC
STM
Theoretical simulation
Tunneling current
Graphene
Issue Date: 2015
Citation: Telychko, M, Berger, J, Majzik, Z, Jelínek, P, Svec, M (2015). Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature. Beilstein Journal of Nanotechnology 6 (1) : 901-906. ScholarBank@NUS Repository. https://doi.org/10.3762/bjnano.6.93
Rights: Attribution 4.0 International
Abstract: We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms. © 2015 Telychko et al; licensee Beilstein-Institut.
Source Title: Beilstein Journal of Nanotechnology
URI: https://scholarbank.nus.edu.sg/handle/10635/183611
ISSN: 21904286
DOI: 10.3762/bjnano.6.93
Rights: Attribution 4.0 International
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