Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
Telychko, M Berger, J Majzik, Z Jelínek, P Svec, M
Berger, J
Majzik, Z
Jelínek, P
Svec, M
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Alternative Title
Abstract
We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms. © 2015 Telychko et al; licensee Beilstein-Institut.
Keywords
Atomic force microscopy, Carbon, Electron scattering, Silicon carbide, AFM, Dynamic atomic force microscopy, Electronic contributions, Room temperature, SiC, STM, Theoretical simulation, Tunneling current, Graphene
Source Title
Beilstein Journal of Nanotechnology
Publisher
Series/Report No.
Collections
Rights
Attribution 4.0 International
Date
2015
DOI
10.3762/bjnano.6.93
Type
Article