Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4978634
Title: The effect of post-annealing on the structure and magnetotransport properties of Pr0.5Sr0.5MnO3 thin film
Authors: Chen, L
Zeng, J
Li, M
Tang, Z 
Gao, J
Keywords: Annealing
Deposition
Ferromagnetic materials
Ferromagnetism
Lanthanum compounds
Manganese oxide
Pulsed laser deposition
Single crystals
Temperature
Tensile strain
Antiferromagnetic insulating phase
Compressive strain
Epitaxially grown
Ferromagnetic Phase Transition
Ferromagnetic transition temperatures
Magneto transport properties
Phase separated state
Single crystal substrates
Thin films
Issue Date: 2017
Publisher: American Institute of Physics
Citation: Chen, L, Zeng, J, Li, M, Tang, Z, Gao, J (2017). The effect of post-annealing on the structure and magnetotransport properties of Pr0.5Sr0.5MnO3 thin film. AIP Advances 7 (5) : 55835. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4978634
Rights: Attribution 4.0 International
Abstract: Pr0.5Sr0.5MnO3 (PSMO) thin film is epitaxially grown on (001)-oriented LaAlO3 single-crystal substrate using pulsed laser deposition (PLD). It is found that the as-grown PSMO film shows compressive strain in plane and tensile strain out of the plane. Upon annealing at 900°C in the air, the strain is significantly relaxed. The paramagnetic to ferromagnetic phase transition temperature TC shifts from 200 K to 220 K, and the antiferromagnetic insulating phase is suppressed in the phase separated state at low temperature. In addition, the magnetoresistance (MR) is found to increase around the ferromagnetic transition temperature, whereas it decreases from 99% to 60% at low temperature of 20 K. © 2017 Author(s).
Source Title: AIP Advances
URI: https://scholarbank.nus.edu.sg/handle/10635/183528
ISSN: 2158-3226
DOI: 10.1063/1.4978634
Rights: Attribution 4.0 International
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