Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep21536
Title: Chemical Vapor Deposition of Monolayer Mo1-xWxS2 Crystals with Tunable Band Gaps
Authors: Wang, Z
Liu, P
Ito, Y
Ning, S 
Tan, Y
Fujita, T
Hirata, A
Chen, M
Issue Date: 2016
Publisher: Nature Publishing Group
Citation: Wang, Z, Liu, P, Ito, Y, Ning, S, Tan, Y, Fujita, T, Hirata, A, Chen, M (2016). Chemical Vapor Deposition of Monolayer Mo1-xWxS2 Crystals with Tunable Band Gaps. Scientific Reports 6 : 21536. ScholarBank@NUS Repository. https://doi.org/10.1038/srep21536
Rights: Attribution 4.0 International
Abstract: Band gap engineering of monolayer transition metal dichalcogenides, such as MoS2 and WS2, is essential for the applications of the two-dimensional (2D) crystals in electronic and optoelectronic devices. Although it is known that chemical mixture can evidently change the band gaps of alloyed Mo1-xWxS2 crystals, the successful growth of Mo1-xWxS2 monolayers with tunable Mo/W ratios has not been realized by conventional chemical vapor deposition. Herein, we developed a low-pressure chemical vapor deposition (LP-CVD) method to grow monolayer Mo1-xWxS2 (x = 0-1) 2D crystals with a wide range of Mo/W ratios. Raman spectroscopy and high-resolution transmission electron microscopy demonstrate the homogeneous mixture of Mo and W in the 2D alloys. Photoluminescence measurements show that the optical band gaps of the monolayer Mo1-xWxS2 crystals strongly depend on the Mo/W ratios and continuously tunable band gap can be achieved by controlling the W or Mo portion by the LP-CVD.
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/182500
ISSN: 2045-2322
DOI: 10.1038/srep21536
Rights: Attribution 4.0 International
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