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Title: Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission
Authors: Shlyakhov, I
Chai, J
Yang, M
Wang, S.J 
Afanas'Ev, V.V
Houssa, M
Stesmans, A
Keywords: Conduction bands
Interfaces (materials)
Oxide films
Semiconducting films
Valence bands
Band alignments
Electron bands
Electron barrier
Interface dipole
Internal photoemission
Oxide surface
Sulfur vapors
Silicon compounds
Issue Date: 2018
Citation: Shlyakhov, I, Chai, J, Yang, M, Wang, S.J, Afanas'Ev, V.V, Houssa, M, Stesmans, A (2018). Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission. APL Materials 6 (2) : 26801. ScholarBank@NUS Repository.
Rights: Attribution 4.0 International
Abstract: Electron band alignment at interfaces of SiO2 with directly synthesized few-monolayer (ML) thin semiconducting MoS2 films is characterized by using field-dependent internal photoemission of electrons from the valence band of MoS2 into the oxide conduction band. We found that reducing the grown MoS2 film thickness from 3 ML to 1 ML leads to 400 meV downshift of the valence band top edge as referenced to the common energy level of the SiO2 conduction band bottom. Furthermore, comparison of the MoS2 layers grown by a H-free process (sputtering of Mo in sulfur vapor) to films synthesized by sulfurization of metallic Mo in H2S indicates a significant (500 meV) electron barrier increase in the last case. This effect is tentatively ascribed to the formation of an interface dipole due to the interaction of hydrogen with the oxide surface. © 2017 Author(s).
Source Title: APL Materials
ISSN: 2166532X
DOI: 10.1063/1.5002617
Rights: Attribution 4.0 International
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