Please use this identifier to cite or link to this item:
https://doi.org/10.3390/s130201856
| Title: | A new mirroring circuit for power MOS current sensing highly immune to EMI | Authors: | Aiello, O Fiori, F |
Keywords: | Current sensing Current sensors Integrated currents Miller effects Power transistors Radio frequency interference SenseFET Smart power CMOS integrated circuits Computer simulation Electromagnetic compatibility Electromagnetic pulse Power electronics Sensors Signal interference Transistors Drain current |
Issue Date: | 2013 | Citation: | Aiello, O, Fiori, F (2013). A new mirroring circuit for power MOS current sensing highly immune to EMI. Sensors (Switzerland) 13 (2) : 1856-1871. ScholarBank@NUS Repository. https://doi.org/10.3390/s130201856 | Rights: | Attribution 4.0 International | Abstract: | This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor. © 2013 by the authors; licensee MDPI, Basel, Switzerland. | Source Title: | Sensors (Switzerland) | URI: | https://scholarbank.nus.edu.sg/handle/10635/180802 | ISSN: | 1424-8220 | DOI: | 10.3390/s130201856 | Rights: | Attribution 4.0 International |
| Appears in Collections: | Staff Publications Elements |
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