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Please use this identifier to cite or link to this item: https://doi.org/10.3390/s130201856
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dc.titleA new mirroring circuit for power MOS current sensing highly immune to EMI
dc.contributor.authorAiello, O
dc.contributor.authorFiori, F
dc.date.accessioned2020-10-27T04:47:59Z
dc.date.available2020-10-27T04:47:59Z
dc.date.issued2013
dc.identifier.citationAiello, O, Fiori, F (2013). A new mirroring circuit for power MOS current sensing highly immune to EMI. Sensors (Switzerland) 13 (2) : 1856-1871. ScholarBank@NUS Repository. https://doi.org/10.3390/s130201856
dc.identifier.issn1424-8220
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/180802
dc.description.abstractThis paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor. © 2013 by the authors; licensee MDPI, Basel, Switzerland.
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.sourceUnpaywall 20201031
dc.subjectCurrent sensing
dc.subjectCurrent sensors
dc.subjectIntegrated currents
dc.subjectMiller effects
dc.subjectPower transistors
dc.subjectRadio frequency interference
dc.subjectSenseFET
dc.subjectSmart power
dc.subjectCMOS integrated circuits
dc.subjectComputer simulation
dc.subjectElectromagnetic compatibility
dc.subjectElectromagnetic pulse
dc.subjectPower electronics
dc.subjectSensors
dc.subjectSignal interference
dc.subjectTransistors
dc.subjectDrain current
dc.typeArticle
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.3390/s130201856
dc.description.sourcetitleSensors (Switzerland)
dc.description.volume13
dc.description.issue2
dc.description.page1856-1871
dc.published.statePublished
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