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https://doi.org/10.1002/adma.201601208
Title: | Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica | Authors: | Mehonic, A Buckwell, M Montesi, L Munde, M.S Gao, D Hudziak, S Chater, R.J Fearn, S McPhail, D Bosman, M Shluger, A.L Kenyon, A.J |
Keywords: | Electric fields Microelectronics Photonic devices Silica Silicon Amorphous oxides Dynamic structural changes Electrical stress New technologies Oxide breakdown Oxide nanostructures Oxide structures Resistive switching Amorphous silicon |
Issue Date: | 2016 | Publisher: | Wiley-VCH Verlag | Citation: | Mehonic, A, Buckwell, M, Montesi, L, Munde, M.S, Gao, D, Hudziak, S, Chater, R.J, Fearn, S, McPhail, D, Bosman, M, Shluger, A.L, Kenyon, A.J (2016). Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica. Advanced Materials 28 (34) : 7486-7493. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.201601208 | Rights: | Attribution 4.0 International | Abstract: | Researchers demonstrate that field-driven movement of oxygen ions causes changes in oxide structure on a much larger scale than previously thought. They that these changes are apparent at electric fields comparable to those routinely used in microelectronic and photonic devices. A comprehensive understanding of dynamic structural changes thus promises to enable new technologies in a range of fields as well as providing an understanding of the early stages of catastrophic oxide breakdown. | Source Title: | Advanced Materials | URI: | https://scholarbank.nus.edu.sg/handle/10635/179615 | ISSN: | 0935-9648 | DOI: | 10.1002/adma.201601208 | Rights: | Attribution 4.0 International |
Appears in Collections: | Staff Publications Elements |
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