Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.201601208
Title: Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica
Authors: Mehonic, A
Buckwell, M
Montesi, L
Munde, M.S
Gao, D
Hudziak, S
Chater, R.J
Fearn, S
McPhail, D
Bosman, M 
Shluger, A.L
Kenyon, A.J
Keywords: Electric fields
Microelectronics
Photonic devices
Silica
Silicon
Amorphous oxides
Dynamic structural changes
Electrical stress
New technologies
Oxide breakdown
Oxide nanostructures
Oxide structures
Resistive switching
Amorphous silicon
Issue Date: 2016
Publisher: Wiley-VCH Verlag
Citation: Mehonic, A, Buckwell, M, Montesi, L, Munde, M.S, Gao, D, Hudziak, S, Chater, R.J, Fearn, S, McPhail, D, Bosman, M, Shluger, A.L, Kenyon, A.J (2016). Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica. Advanced Materials 28 (34) : 7486-7493. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.201601208
Rights: Attribution 4.0 International
Abstract: Researchers demonstrate that field-driven movement of oxygen ions causes changes in oxide structure on a much larger scale than previously thought. They that these changes are apparent at electric fields comparable to those routinely used in microelectronic and photonic devices. A comprehensive understanding of dynamic structural changes thus promises to enable new technologies in a range of fields as well as providing an understanding of the early stages of catastrophic oxide breakdown.
Source Title: Advanced Materials
URI: https://scholarbank.nus.edu.sg/handle/10635/179615
ISSN: 0935-9648
DOI: 10.1002/adma.201601208
Rights: Attribution 4.0 International
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