Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep24476
Title: Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors
Authors: Lei, Y
Deng, P
Li, J 
Lin, M
Zhu, F
Ng, T.-W
Lee, C.-S
Ong, B.S
Issue Date: 2016
Citation: Lei, Y, Deng, P, Li, J, Lin, M, Zhu, F, Ng, T.-W, Lee, C.-S, Ong, B.S (2016). Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors. Scientific Reports 6 : 24476. ScholarBank@NUS Repository. https://doi.org/10.1038/srep24476
Rights: Attribution 4.0 International
Abstract: Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V-1 s-1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements.
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/178921
ISSN: 20452322
DOI: 10.1038/srep24476
Rights: Attribution 4.0 International
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