Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41598-017-09565-8
Title: Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure
Authors: Munde, M.S
Mehonic, A
Ng, W.H
Buckwell, M
Montesi, L
Bosman, M 
Shluger, A.L
Kenyon, A.J
Issue Date: 2017
Citation: Munde, M.S, Mehonic, A, Ng, W.H, Buckwell, M, Montesi, L, Bosman, M, Shluger, A.L, Kenyon, A.J (2017). Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure. Scientific Reports 7 (1) : 9274. ScholarBank@NUS Repository. https://doi.org/10.1038/s41598-017-09565-8
Rights: Attribution 4.0 International
Abstract: We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the oxide-electrode interface. By combining electrical probing measurements, atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM), we observe that devices with rougher oxide-electrode interfaces exhibit lower electroforming voltages and more reliable switching behaviour. We show that rougher interfaces are consistent with enhanced columnar microstructure in the oxide layer. Our results suggest that columnar microstructure in the oxide will be a key factor to consider for the optimization of future SiOx-based resistance random access memory. © 2017 The Author(s).
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/178304
ISSN: 20452322
DOI: 10.1038/s41598-017-09565-8
Rights: Attribution 4.0 International
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