Please use this identifier to cite or link to this item: https://doi.org/10.1002/adfm.202006802
Title: Suppressing Ion Migration across Perovskite Grain Boundaries by Polymer Additives
Authors: Ma, Y
Cheng, Y 
Xu, X
Li, M
Zhang, C
Cheung, SH
Zeng, Z
Shen, D
Xie, YM
Chiu, KL
Lin, F 
So, SK
Lee, CS
Tsang, SW
Issue Date: 1-Jan-2020
Publisher: Wiley
Citation: Ma, Y, Cheng, Y, Xu, X, Li, M, Zhang, C, Cheung, SH, Zeng, Z, Shen, D, Xie, YM, Chiu, KL, Lin, F, So, SK, Lee, CS, Tsang, SW (2020-01-01). Suppressing Ion Migration across Perovskite Grain Boundaries by Polymer Additives. Advanced Functional Materials : 2006802-2006802. ScholarBank@NUS Repository. https://doi.org/10.1002/adfm.202006802
Abstract: © 2020 Wiley-VCH GmbH Passivation of organometal halide perovskites with polar molecules has been recently demonstrated to improve the photovoltaic device efficiency and stability. However, the mechanism is still elusive. Here, it is found that both polymers with large and small dipole moment of 3.7 D and 0.6 D have negligible defect passivation effect on the MAPbI3 perovskite films as evidenced by photothermal deflection spectroscopy. The photovoltaic devices with and without the polymer additives also have comparable power conversion efficiencies around 19%. However, devices with the additives have noticeable improvement in stability under continuous light irradiation. It is found that although the initial mobile ion concentrations are comparable in both devices with and without the additives, the additives can strongly suppress the ion migration during the device operation. This contributes to the significantly enhanced electrical-field stress tolerance of the perovskite solar cells (PVSCs). The PVSCs with polymer additives can operate up to −2 V reverse voltage bias which is much larger than the breakdown voltage of −0.5 V that has been commonly observed. This study provides insight into the role of additives in perovskites and the corresponding device degradation mechanism.
Source Title: Advanced Functional Materials
URI: https://scholarbank.nus.edu.sg/handle/10635/177381
ISSN: 1616301X
16163028
DOI: 10.1002/adfm.202006802
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