Please use this identifier to cite or link to this item: https://doi.org/10.1002/advs.201600003
Title: Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications
Authors: Li, M
Liu, D
Wei, D
Song, X
Wei, D
Wee, A.T.S 
Issue Date: 2016
Citation: Li, M, Liu, D, Wei, D, Song, X, Wei, D, Wee, A.T.S (2016). Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications. Advanced Science 3 (11) : 1600003. ScholarBank@NUS Repository. https://doi.org/10.1002/advs.201600003
Abstract: Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma-enhanced chemical vapor deposition (PECVD) is a low-temperature, controllable, and catalyst-free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed. © 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Source Title: Advanced Science
URI: https://scholarbank.nus.edu.sg/handle/10635/176117
ISSN: 2198-3844
DOI: 10.1002/advs.201600003
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