Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4999810
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dc.titleAlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
dc.contributor.authorLiu, X
dc.contributor.authorGu, H
dc.contributor.authorLi, K
dc.contributor.authorGuo, L
dc.contributor.authorZhu, D
dc.contributor.authorLu, Y
dc.contributor.authorWang, J
dc.contributor.authorKuo, H.-C
dc.contributor.authorLiu, Z
dc.contributor.authorLiu, W
dc.contributor.authorChen, L
dc.contributor.authorFang, J
dc.contributor.authorAng, K.-W
dc.contributor.authorXu, K
dc.contributor.authorAo, J.-P
dc.date.accessioned2020-09-14T08:02:20Z
dc.date.available2020-09-14T08:02:20Z
dc.date.issued2017
dc.identifier.citationLiu, X, Gu, H, Li, K, Guo, L, Zhu, D, Lu, Y, Wang, J, Kuo, H.-C, Liu, Z, Liu, W, Chen, L, Fang, J, Ang, K.-W, Xu, K, Ao, J.-P (2017). AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer. AIP Advances 7 (9) : 95305. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4999810
dc.identifier.issn2158-3226
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/176083
dc.description.abstractThis paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications. © 2017 Author(s).
dc.sourceUnpaywall 20200831
dc.subjectElectron mobility
dc.subjectGallium nitride
dc.subjectMaterials properties
dc.subjectMetallorganic chemical vapor deposition
dc.subjectOrganic chemicals
dc.subjectOrganometallics
dc.subjectPower semiconductor devices
dc.subjectA3. metal organic chemical vapor deposition (MOCVD)
dc.subjectAlgan/gan high electron-mobility transistors
dc.subjectDevice characteristics
dc.subjectHigh-power device applications
dc.subjectHigh-quality materials
dc.subjectSubthreshold swing
dc.subjectSystematic study
dc.subjectUltralow dislocation density
dc.subjectHigh electron mobility transistors
dc.typeArticle
dc.contributor.departmentDEPT OF ELECTRICAL & COMPUTER ENGG
dc.contributor.departmentDIVISION OF BIOENGINEERING
dc.description.doi10.1063/1.4999810
dc.description.sourcetitleAIP Advances
dc.description.volume7
dc.description.issue9
dc.description.page95305
dc.published.statePublished
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