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Title: AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
Authors: Liu, X
Gu, H
Li, K
Guo, L
Zhu, D
Lu, Y
Wang, J
Kuo, H.-C
Liu, Z 
Liu, W
Chen, L
Fang, J
Ang, K.-W 
Xu, K
Ao, J.-P
Keywords: Electron mobility
Gallium nitride
Materials properties
Metallorganic chemical vapor deposition
Organic chemicals
Power semiconductor devices
A3. metal organic chemical vapor deposition (MOCVD)
Algan/gan high electron-mobility transistors
Device characteristics
High-power device applications
High-quality materials
Subthreshold swing
Systematic study
Ultralow dislocation density
High electron mobility transistors
Issue Date: 2017
Citation: Liu, X, Gu, H, Li, K, Guo, L, Zhu, D, Lu, Y, Wang, J, Kuo, H.-C, Liu, Z, Liu, W, Chen, L, Fang, J, Ang, K.-W, Xu, K, Ao, J.-P (2017). AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer. AIP Advances 7 (9) : 95305. ScholarBank@NUS Repository.
Abstract: This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications. © 2017 Author(s).
Source Title: AIP Advances
ISSN: 2158-3226
DOI: 10.1063/1.4999810
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