Please use this identifier to cite or link to this item: https://doi.org/10.1038/srep13314
Title: Tailoring the two dimensional electron gas at polar ABO3/SrTiO3 interfaces for oxide electronics
Authors: Li C. 
Liu Z.
Lü W.
Wang X.R.
Annadi A.
Huang Z. 
Zeng S. 
Ariando 
Venkatesan T. 
Issue Date: 2015
Publisher: Nature Publishing Group
Citation: Li C., Liu Z., Lü W., Wang X.R., Annadi A., Huang Z., Zeng S., Ariando, Venkatesan T. (2015). Tailoring the two dimensional electron gas at polar ABO3/SrTiO3 interfaces for oxide electronics. Scientific Reports 5 : 13314. ScholarBank@NUS Repository. https://doi.org/10.1038/srep13314
Abstract: The 2D electron gas at the polar/non-polar oxide interface has become an important platform for several novel oxide electronic devices. In this paper, the transport properties of a wide range of polar perovskite oxide ABO3/SrTiO3 (STO) interfaces, where ABO3 includes LaAlO3, PrAlO3, NdAlO3, NdGaO3 and LaGaO3 in both crystalline and amorphous forms, were investigated. A robust 4unit cell (uc) critical thickness for metal insulator transition was observed for crystalline polar layer/STO interface while the critical thickness for amorphous ones was strongly dependent on the B site atom and its oxygen affinity. For the crystalline interfaces, a sharp transition to the metallic state (i.e. polarization catastrophe induced 2D electron gas only) occurs at a growth temperature of 515°C which corresponds to a critical relative crystallinity of ?70±10% of the LaAlO3 overlayer. This temperature is generally lower than the metal silicide formation temperature and thus offers a route to integrate oxide heterojunction based devices on silicon.
Source Title: Scientific Reports
URI: https://scholarbank.nus.edu.sg/handle/10635/175489
ISSN: 20452322
DOI: 10.1038/srep13314
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