Please use this identifier to cite or link to this item: https://doi.org/10.1038/am.2016.21
Title: Promotion of reversible Li+ storage in transition metal dichalcogenides by Ag nanoclusters
Authors: Ji, G
Yu, Y
Yao, Q 
Qu, B 
Chen, D 
Chen, W
Xie, J 
Lee, J.Y 
Keywords: Graphene
Lithium
Nanoclusters
Silver
Transition metals
Discharge capacities
High current densities
Silver nanoclusters
Storage mechanism
Storage properties
Structural modifications
Ternary composites
Transition metal dichalcogenides
Molybdenum compounds
Issue Date: 2016
Citation: Ji, G, Yu, Y, Yao, Q, Qu, B, Chen, D, Chen, W, Xie, J, Lee, J.Y (2016). Promotion of reversible Li+ storage in transition metal dichalcogenides by Ag nanoclusters. NPG Asia Materials 8 (3) : e247. ScholarBank@NUS Repository. https://doi.org/10.1038/am.2016.21
Abstract: After years of development, improvement in the electrochemical properties of MoS2 through structural modifications has reached its limit. Further improvements in the Li+ storage properties of MoS2 must be based on an understanding of the Li+ storage mechanism in MoS2. On this basis, we have developed a novel ternary composite of graphene, MoS2 nanosheets and a small amount (1 wt%) of silver nanoclusters (NCs; MoS2/G/Ag). The presence of the Ag NCs in the composite is, however, instrumental and serves several purposes: immobilization of sulfur, increased association with Li+ and increased spacing between graphene sheets. The presence of this small amount of Ag NCs was able to increase the Li+ storage capacity of MoS2 by 60% (with a discharge capacity of ~ 1300 mAh g-1 at 0.5 A g-1 compared with 800-850 mAh g-1 for a MoS2/graphene composite without the Ag NCs (MoS2/G)). The MoS2/G/Ag composite also exhibited a very impressive rate performance: discharge capacities of 1040 and 850 mAh g-1 at the very high current densities of 1 and 5 A g-1, respectively (the corresponding values from MoS2/G without the Ag NCs are 790 and 580 mAh g-1).
Source Title: NPG Asia Materials
URI: https://scholarbank.nus.edu.sg/handle/10635/174097
ISSN: 18844049
DOI: 10.1038/am.2016.21
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