Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/170922
Title: Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions
Authors: Li, Suchun
Gan, Chee Kwan
Son, Young-Woo
Feng, Yuan Ping 
Quek, Su Ying 
Keywords: Science & Technology
Physical Sciences
Physics, Applied
Physics
GRAPHITE
SILICON
ZIGZAG
Issue Date: 5-Jan-2015
Publisher: American Institute of Physics
Citation: Li, Suchun, Gan, Chee Kwan, Son, Young-Woo, Feng, Yuan Ping, Quek, Su Ying (2015-01-05). Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions. APPLIED PHYSICS LETTERS 106 (1). ScholarBank@NUS Repository.
Abstract: © 2015 AIP Publishing LLC. Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ∼0.2 V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate, and whether the junction is made by etching or by hydrogenation.
Source Title: APPLIED PHYSICS LETTERS
URI: https://scholarbank.nus.edu.sg/handle/10635/170922
ISSN: 00036951
10773118
Appears in Collections:Staff Publications
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