Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/168674
Title: Anisotropic multicarrier transport at the (111) LaAlO3/SrTiO3 interface
Authors: Davis, S.
Chandrasekhar, V.
Huang, Z.
Han, K.
Ariando 
Venkatesan, T. 
Issue Date: 17-Jan-2017
Publisher: American Physical Society
Citation: Davis, S., Chandrasekhar, V., Huang, Z., Han, K., Ariando, Venkatesan, T. (2017-01-17). Anisotropic multicarrier transport at the (111) LaAlO3/SrTiO3 interface. PHYSICAL REVIEW B 95 (3). ScholarBank@NUS Repository.
Abstract: The conducting gas that forms at the interface between LaAlO3 and SrTiO3 has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature electrical transport properties are highly anisotropic in that they differ significantly along two mutually orthogonal crystal orientations at the interface. While anisotropy in the resistivity has been reported in some (001) samples and in (110) samples, the anisotropy in the (111) samples reported here is much stronger and also manifests itself in the Hall coefficient as well as the capacitance. In addition, the anisotropy is not present at room temperature and at liquid nitrogen temperatures, but only at liquid helium temperatures and below. The anisotropy is accentuated by exposure to ultraviolet light, which disproportionately affects transport along one surface crystal direction. Furthermore, analysis of the low-temperature Hall coefficient and the capacitance as a function of back gate voltage indicates that in addition to electrons, holes contribute to the electrical transport. © 2017 American Physical Society.
Source Title: PHYSICAL REVIEW B
URI: https://scholarbank.nus.edu.sg/handle/10635/168674
ISSN: 24699950
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