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|Title:||Electrical properties and subband occupancy at the (La,Sr)(Al,Ta)O-3/SrTiO3 interface||Authors:||Han, K.
Zeng, S. W.
Li, C. J.
Zhou, W. X.
Wang, X. Renshaw
Coey, J. M. D.
|Issue Date:||19||Publisher:||American Physical Society||Citation:||Han, K., Huang, Z., Zeng, S. W., Yang, M., Li, C. J., Zhou, W. X., Wang, X. Renshaw, Venkatesan, T., Coey, J. M. D., Goiran, M., Escoffier, W., Ariando A. (19). Electrical properties and subband occupancy at the (La,Sr)(Al,Ta)O-3/SrTiO3 interface. PHYSICAL REVIEW MATERIALS 1 (1). ScholarBank@NUS Repository.||Abstract:||The quasi-two-dimensional electron gas at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons (?1?104cm2V-1s-1 at 2 K) occupy the lower-energy 3dxy subband, while lower-mobility electrons (?1?103cm2V-1s-1 at 2 K) propagate in the higher-energy 3dxz/yz-dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of 3dxy electrons remain at the annealed interface, showing tunable Shubnikov-de Haas oscillations below 9 T at 2 K and an effective mass of 0.7me. By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to 50000cm2V-1s-1 by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces. © 2017 American Physical Society.||Source Title:||PHYSICAL REVIEW MATERIALS||URI:||https://scholarbank.nus.edu.sg/handle/10635/168611||ISSN:||2475-9953|
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