TITANIUM NITRIDE FILM DEPOSITED REACTIVE DC MAGNETRON SPUTTERING

Abstract

Titanium nitride (TiNx) thin film is interesting to be considered as a diffusion barrier in GaN-based LEDs when device dimensions scale down. This thesis studied the film properties of TiN thin layers deposited onto Si substrate by reactive dc magnetron sputtering varying deposition temperature and nitrogen flow rate, and tried to find optimum growth conditions. Crystal structure, surface morphology and roughness, hardness and adhesion were well examined on TiN films grown in various conditions via kinds of characterization facilities.