Please use this identifier to cite or link to this item: https://doi.org/10.1038/s41467-018-04939-6
Title: Direct visualization of current-induced spin accumulation in topological insulators
Authors: Liu Y.
Besbas J. 
Wang Y.
He P. 
Chen M.
Zhu D. 
Wu Y. 
Lee J.M. 
Wang L.
Moon J.
Koirala N.
Oh S.
Yang H. 
Issue Date: 2018
Publisher: Nature Publishing Group
Citation: Liu Y., Besbas J., Wang Y., He P., Chen M., Zhu D., Wu Y., Lee J.M., Wang L., Moon J., Koirala N., Oh S., Yang H. (2018). Direct visualization of current-induced spin accumulation in topological insulators. Nature Communications 9 (1) : 2492. ScholarBank@NUS Repository. https://doi.org/10.1038/s41467-018-04939-6
Abstract: Charge-to-spin conversion in various materials is the key for the fundamental understanding of spin-orbitronics and efficient magnetization manipulation. Here we report the direct spatial imaging of current-induced spin accumulation at the channel edges of Bi2Se3 and BiSbTeSe2 topological insulators as well as Pt by a scanning photovoltage microscope at room temperature. The spin polarization is along the out-of-plane direction with opposite signs for the two channel edges. The accumulated spin direction reverses sign upon changing the current direction and the detected spin signal shows a linear dependence on the magnitude of currents, indicating that our observed phenomena are current-induced effects. The spin Hall angle of Bi2Se3, BiSbTeSe2, and Pt is determined to be 0.0085, 0.0616, and 0.0085, respectively. Our results open up the possibility of optically detecting the current-induced spin accumulations, and thus point towards a better understanding of the interaction between spins and circularly polarized light. © 2018 The Author(s).
Source Title: Nature Communications
URI: http://scholarbank.nus.edu.sg/handle/10635/152522
ISSN: 20411723
DOI: 10.1038/s41467-018-04939-6
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