MOCVD growth and characterization of wide band gap group III-nitride semiconductors

Abstract

In this thesis, five key areas of GaN research were addressed, namely: the growth and characterization of undoped GaN on sapphire, the growth and characterization of InGaN thin films and the formation of In-rich quantum dots as well as the carrier recombination mechanisms of InGaN, InGaN/GaN MQW, the epitaxial lateral overgrowth (ELO) of GaN, the growth of p-type GaN with a multi-layered buffer (MLB) on sapphire, the growth and characterization of GaN and InGaN/GaN MQWs with MLBs on Si substrates.