Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13529
Title: MOCVD growth and characterization of wide band gap group III-nitride semiconductors
Authors: LI PENG
Keywords: MOCVD, GaN, InGaN, epitaxy, Photoluminescence, ELO
Issue Date: 30-Sep-2003
Source: LI PENG (2003-09-30). MOCVD growth and characterization of wide band gap group III-nitride semiconductors. ScholarBank@NUS Repository.
Abstract: In this thesis, five key areas of GaN research were addressed, namely: the growth and characterization of undoped GaN on sapphire, the growth and characterization of InGaN thin films and the formation of In-rich quantum dots as well as the carrier recombination mechanisms of InGaN, InGaN/GaN MQW, the epitaxial lateral overgrowth (ELO) of GaN, the growth of p-type GaN with a multi-layered buffer (MLB) on sapphire, the growth and characterization of GaN and InGaN/GaN MQWs with MLBs on Si substrates.
URI: http://scholarbank.nus.edu.sg/handle/10635/13529
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