Please use this identifier to cite or link to this item: https://doi.org/10.7567/JJAP.54.04DC17
Title: Strain effects on monolayer MoS2 field effect transistors
Authors: Zeng L
Xin Z 
Chang P
Liu X.
Issue Date: 2015
Publisher: Japan Society of Applied Physics
Citation: Zeng L, Xin Z, Chang P, Liu X. (2015). Strain effects on monolayer MoS2 field effect transistors. Japanese Journal of Applied Physics 54 (4). ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.54.04DC17
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/127708
ISSN: 214922
DOI: 10.7567/JJAP.54.04DC17
Appears in Collections:Staff Publications

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