Please use this identifier to cite or link to this item:
https://doi.org/10.7567/JJAP.54.04DC17
| Title: | Strain effects on monolayer MoS2 field effect transistors | Authors: | Zeng L Xin Z Chang P Liu X. |
Issue Date: | 2015 | Publisher: | Japan Society of Applied Physics | Citation: | Zeng L, Xin Z, Chang P, Liu X. (2015). Strain effects on monolayer MoS2 field effect transistors. Japanese Journal of Applied Physics 54 (4). ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.54.04DC17 | Source Title: | Japanese Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/127708 | ISSN: | 214922 | DOI: | 10.7567/JJAP.54.04DC17 |
| Appears in Collections: | Staff Publications |
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