Strain effects on monolayer MoS2 field effect transistors

Please use this identifier to cite or link to this item: https://doi.org/10.7567/JJAP.54.04DC17

DC Field	Value
dc.title	Strain effects on monolayer MoS2 field effect transistors
dc.contributor.author	Zeng L
dc.contributor.author	Xin Z
dc.contributor.author	Chang P
dc.contributor.author	Liu X.
dc.date.accessioned	2016-09-09T09:21:18Z
dc.date.available	2016-09-09T09:21:18Z
dc.date.issued	2015
dc.identifier.citation	Zeng L, Xin Z, Chang P, Liu X. (2015). Strain effects on monolayer MoS2 field effect transistors. Japanese Journal of Applied Physics 54 (4). ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.54.04DC17
dc.identifier.issn	214922
dc.identifier.uri	http://scholarbank.nus.edu.sg/handle/10635/127708
dc.description.uri	http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.7567/JJAP.54.04DC17
dc.publisher	Japan Society of Applied Physics
dc.type	Conference Paper
dc.contributor.department	MECHANICAL ENGINEERING
dc.description.doi	10.7567/JJAP.54.04DC17
dc.description.sourcetitle	Japanese Journal of Applied Physics
dc.description.volume	54
dc.description.issue	4
dc.identifier.isiut	000357694000029
dc.published.state	Published
dc.grant.id	2013M540018
dc.grant.id	61306104
dc.grant.fundingagency	China Postdoctoral Science Foundation
dc.grant.fundingagency	NSFC, China Postdoctoral Science Foundation
Appears in Collections:	Staff Publications

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