Please use this identifier to cite or link to this item:
https://doi.org/10.1103/PhysRevB.88.195147
Title: | Topological phase transition and two-dimensional topological insulators in Ge-based thin films | Authors: | Singh, B. Lin, H. Prasad, R. Bansil, A. |
Issue Date: | 25-Nov-2013 | Citation: | Singh, B., Lin, H., Prasad, R., Bansil, A. (2013-11-25). Topological phase transition and two-dimensional topological insulators in Ge-based thin films. Physical Review B - Condensed Matter and Materials Physics 88 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.88.195147 | Abstract: | We discuss possible topological phase transitions in Ge-based thin films of Ge(BixSb1-x)2Te4 as a function of layer thickness and Bi concentration x using the first-principles density functional theory framework. The bulk material is a topological insulator at x=1.0 with a single Dirac cone surface state at the surface Brillouin zone center, whereas it is a trivial insulator at x=0. Through a systematic examination of the band topologies, we predict that thin films of Ge(Bi xSb1-x)2Te4 with x=0.6, 0.8, and 1.0 are candidates for two-dimensional (2D) topological insulators, which would undergo a 2D topological phase transition as a function of x. A topological phase diagram for Ge(BixSb1-x)2Te4 thin films is presented to help guide their experimental exploration. © 2013 American Physical Society. | Source Title: | Physical Review B - Condensed Matter and Materials Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/126662 | ISSN: | 10980121 | DOI: | 10.1103/PhysRevB.88.195147 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.