Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4792348
Title: Spatially resolved electrical parameters of silicon wafers and solar cells by contactless photoluminescence imaging
Authors: Hameiri, Z.
Chaturvedi, P. 
Issue Date: 18-Feb-2013
Citation: Hameiri, Z., Chaturvedi, P. (2013-02-18). Spatially resolved electrical parameters of silicon wafers and solar cells by contactless photoluminescence imaging. Applied Physics Letters 102 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4792348
Abstract: A contactless method to extract spatially resolved electrical parameters of silicon wafers and silicon solar cells is introduced. The method is based on photoluminescence imaging and can be applied throughout the solar cell fabrication process, even before junction formation. To validate the method, the parameters obtained by it are compared to the ones obtained by the well-established Suns-Voc measurement. Good agreement is obtained. © 2013 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/117161
ISSN: 00036951
DOI: 10.1063/1.4792348
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