Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4792348
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dc.titleSpatially resolved electrical parameters of silicon wafers and solar cells by contactless photoluminescence imaging
dc.contributor.authorHameiri, Z.
dc.contributor.authorChaturvedi, P.
dc.date.accessioned2014-12-12T08:02:16Z
dc.date.available2014-12-12T08:02:16Z
dc.date.issued2013-02-18
dc.identifier.citationHameiri, Z., Chaturvedi, P. (2013-02-18). Spatially resolved electrical parameters of silicon wafers and solar cells by contactless photoluminescence imaging. Applied Physics Letters 102 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4792348
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/117161
dc.description.abstractA contactless method to extract spatially resolved electrical parameters of silicon wafers and silicon solar cells is introduced. The method is based on photoluminescence imaging and can be applied throughout the solar cell fabrication process, even before junction formation. To validate the method, the parameters obtained by it are compared to the ones obtained by the well-established Suns-Voc measurement. Good agreement is obtained. © 2013 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4792348
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1063/1.4792348
dc.description.sourcetitleApplied Physics Letters
dc.description.volume102
dc.description.issue7
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000315596700074
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