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Title: Observation of bistability in GaAs/AlAs superlattices
Authors: Zhang, Y. 
Klann, R.
Ploog, K.H.
Grahn, H.T.
Issue Date: 26-May-1997
Citation: Zhang, Y.,Klann, R.,Ploog, K.H.,Grahn, H.T. (1997-05-26). Observation of bistability in GaAs/AlAs superlattices. Applied Physics Letters 70 (21) : 2825-2827. ScholarBank@NUS Repository.
Abstract: We have experimentally observed a new kind of current bistability in the time-averaged current-voltage (I-V) characteristic of doped, weakly coupled GaAs/AlAs superlattices, in which the transport is dominated by sequential resonant tunneling between adjacent quantum wells. Time-resolved current measurements show that in some cases the bistability is correlated with a subcritical Hopf bifurcation, while in other cases a discontinuous change of the current oscillation frequency is observed in the bistable region. The origin of this new bistability is attributed to a change of the space charge layer in the superlattice involving charging and discharging effects, which creates a feedback to the external bias. © 1997 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
Appears in Collections:Staff Publications

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