Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/117099
DC Field | Value | |
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dc.title | Observation of bistability in GaAs/AlAs superlattices | |
dc.contributor.author | Zhang, Y. | |
dc.contributor.author | Klann, R. | |
dc.contributor.author | Ploog, K.H. | |
dc.contributor.author | Grahn, H.T. | |
dc.date.accessioned | 2014-12-12T08:01:31Z | |
dc.date.available | 2014-12-12T08:01:31Z | |
dc.date.issued | 1997-05-26 | |
dc.identifier.citation | Zhang, Y.,Klann, R.,Ploog, K.H.,Grahn, H.T. (1997-05-26). Observation of bistability in GaAs/AlAs superlattices. Applied Physics Letters 70 (21) : 2825-2827. ScholarBank@NUS Repository. | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/117099 | |
dc.description.abstract | We have experimentally observed a new kind of current bistability in the time-averaged current-voltage (I-V) characteristic of doped, weakly coupled GaAs/AlAs superlattices, in which the transport is dominated by sequential resonant tunneling between adjacent quantum wells. Time-resolved current measurements show that in some cases the bistability is correlated with a subcritical Hopf bifurcation, while in other cases a discontinuous change of the current oscillation frequency is observed in the bistable region. The origin of this new bistability is attributed to a change of the space charge layer in the superlattice involving charging and discharging effects, which creates a feedback to the external bias. © 1997 American Institute of Physics. | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | INSTITUTE OF MICROELECTRONICS | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 70 | |
dc.description.issue | 21 | |
dc.description.page | 2825-2827 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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