The effect of intrinsic defects on resistive switching based on p-n heterojunction

Please use this identifier to cite or link to this item: https://doi.org/10.1166/nnl.2013.1626

Title:	The effect of intrinsic defects on resistive switching based on p-n heterojunction
Authors:	Zheng, K. Sun, X.W. Teo, K.L.
Keywords:	Filament Heterojunction Interface Intrinsic Defects Resistive Switching
Issue Date:	Aug-2013
Citation:	Zheng, K., Sun, X.W., Teo, K.L. (2013-08). The effect of intrinsic defects on resistive switching based on p-n heterojunction. Nanoscience and Nanotechnology Letters 5 (8) : 868-871. ScholarBank@NUS Repository. https://doi.org/10.1166/nnl.2013.1626
Abstract:	We report a unidirectional bipolar resistive switching in an n-type GaOx /p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaOx and p-NiOx , leading to the switching between Ohmic and diode characteristics of the device. Copyright © 2013 American Scientific Publishers All rights reserved.
Source Title:	Nanoscience and Nanotechnology Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/114534
ISSN:	19414900
DOI:	10.1166/nnl.2013.1626
Appears in Collections:	Staff Publications

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