Please use this identifier to cite or link to this item:
https://doi.org/10.1166/nnl.2013.1626
| DC Field | Value | |
|---|---|---|
| dc.title | The effect of intrinsic defects on resistive switching based on p-n heterojunction | |
| dc.contributor.author | Zheng, K. | |
| dc.contributor.author | Sun, X.W. | |
| dc.contributor.author | Teo, K.L. | |
| dc.date.accessioned | 2014-12-02T08:05:47Z | |
| dc.date.available | 2014-12-02T08:05:47Z | |
| dc.date.issued | 2013-08 | |
| dc.identifier.citation | Zheng, K., Sun, X.W., Teo, K.L. (2013-08). The effect of intrinsic defects on resistive switching based on p-n heterojunction. Nanoscience and Nanotechnology Letters 5 (8) : 868-871. ScholarBank@NUS Repository. https://doi.org/10.1166/nnl.2013.1626 | |
| dc.identifier.issn | 19414900 | |
| dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/114534 | |
| dc.description.abstract | We report a unidirectional bipolar resistive switching in an n-type GaOx /p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaOx and p-NiOx , leading to the switching between Ohmic and diode characteristics of the device. Copyright © 2013 American Scientific Publishers All rights reserved. | |
| dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1166/nnl.2013.1626 | |
| dc.source | Scopus | |
| dc.subject | Filament | |
| dc.subject | Heterojunction | |
| dc.subject | Interface | |
| dc.subject | Intrinsic Defects | |
| dc.subject | Resistive Switching | |
| dc.type | Article | |
| dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
| dc.description.doi | 10.1166/nnl.2013.1626 | |
| dc.description.sourcetitle | Nanoscience and Nanotechnology Letters | |
| dc.description.volume | 5 | |
| dc.description.issue | 8 | |
| dc.description.page | 868-871 | |
| dc.identifier.isiut | 000322605300006 | |
| Appears in Collections: | Staff Publications | |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.