Please use this identifier to cite or link to this item: https://doi.org/10.1166/nnl.2013.1626
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dc.titleThe effect of intrinsic defects on resistive switching based on p-n heterojunction
dc.contributor.authorZheng, K.
dc.contributor.authorSun, X.W.
dc.contributor.authorTeo, K.L.
dc.date.accessioned2014-12-02T08:05:47Z
dc.date.available2014-12-02T08:05:47Z
dc.date.issued2013-08
dc.identifier.citationZheng, K., Sun, X.W., Teo, K.L. (2013-08). The effect of intrinsic defects on resistive switching based on p-n heterojunction. Nanoscience and Nanotechnology Letters 5 (8) : 868-871. ScholarBank@NUS Repository. https://doi.org/10.1166/nnl.2013.1626
dc.identifier.issn19414900
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/114534
dc.description.abstractWe report a unidirectional bipolar resistive switching in an n-type GaOx /p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn junction interface and modify the interface barrier, forming or rupturing the filamentary paths between n-GaOx and p-NiOx , leading to the switching between Ohmic and diode characteristics of the device. Copyright © 2013 American Scientific Publishers All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1166/nnl.2013.1626
dc.sourceScopus
dc.subjectFilament
dc.subjectHeterojunction
dc.subjectInterface
dc.subjectIntrinsic Defects
dc.subjectResistive Switching
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1166/nnl.2013.1626
dc.description.sourcetitleNanoscience and Nanotechnology Letters
dc.description.volume5
dc.description.issue8
dc.description.page868-871
dc.identifier.isiut000322605300006
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