Please use this identifier to cite or link to this item: https://doi.org/10.1007/s10832-007-9161-z
Title: Bilayered Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O 12 thin films
Authors: Sim, C.H. 
Xue, J.M. 
Gao, X.S. 
Zhou, Z.H. 
Wang, J. 
Keywords: BNT
Ferroelectric behaviors
Multilayered thin films
PZT
Issue Date: Dec-2008
Citation: Sim, C.H., Xue, J.M., Gao, X.S., Zhou, Z.H., Wang, J. (2008-12). Bilayered Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O 12 thin films. Journal of Electroceramics 21 (1-4 SPEC. ISS.) : 331-335. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-007-9161-z
Abstract: Bilayered ferroelectric thin films consisting of Pb(Zr 0.52Ti0.48)O3 (PZT) and (Bi 3.15Nd0.85)Ti3O12 (BNT) have been successfully synthesized on Pt/Ti/SiO2/Si substrates, via a combined sol-gel and rf-sputtering route. Their ferroelectric and dielectric properties are critically dependent on the phases present, film texture and in particular layer and film thicknesses. Due to the coupling of PZT and BNT bilayers, there requires an optimized thickness combination of the two ferroelectric layers, in order to give rise to the wanted ferroelectric and dielectric properties, while the phenomenon can not be accounted for by the simple series connection model. © 2007 Springer Science+Business Media, LLC.
Source Title: Journal of Electroceramics
URI: http://scholarbank.nus.edu.sg/handle/10635/114490
ISSN: 13853449
DOI: 10.1007/s10832-007-9161-z
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