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https://doi.org/10.1007/s10832-007-9161-z
| Title: | Bilayered Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O 12 thin films | Authors: | Sim, C.H. Xue, J.M. Gao, X.S. Zhou, Z.H. Wang, J. |
Keywords: | BNT Ferroelectric behaviors Multilayered thin films PZT |
Issue Date: | Dec-2008 | Citation: | Sim, C.H., Xue, J.M., Gao, X.S., Zhou, Z.H., Wang, J. (2008-12). Bilayered Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O 12 thin films. Journal of Electroceramics 21 (1-4 SPEC. ISS.) : 331-335. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-007-9161-z | Abstract: | Bilayered ferroelectric thin films consisting of Pb(Zr 0.52Ti0.48)O3 (PZT) and (Bi 3.15Nd0.85)Ti3O12 (BNT) have been successfully synthesized on Pt/Ti/SiO2/Si substrates, via a combined sol-gel and rf-sputtering route. Their ferroelectric and dielectric properties are critically dependent on the phases present, film texture and in particular layer and film thicknesses. Due to the coupling of PZT and BNT bilayers, there requires an optimized thickness combination of the two ferroelectric layers, in order to give rise to the wanted ferroelectric and dielectric properties, while the phenomenon can not be accounted for by the simple series connection model. © 2007 Springer Science+Business Media, LLC. | Source Title: | Journal of Electroceramics | URI: | http://scholarbank.nus.edu.sg/handle/10635/114490 | ISSN: | 13853449 | DOI: | 10.1007/s10832-007-9161-z |
| Appears in Collections: | Staff Publications |
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