Please use this identifier to cite or link to this item:
|Title:||Bilayered Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O 12 thin films||Authors:||Sim, C.H.
Multilayered thin films
|Issue Date:||Dec-2008||Citation:||Sim, C.H., Xue, J.M., Gao, X.S., Zhou, Z.H., Wang, J. (2008-12). Bilayered Pb(Zr,Ti)O3/(Bi,Nd)4Ti3O 12 thin films. Journal of Electroceramics 21 (1-4 SPEC. ISS.) : 331-335. ScholarBank@NUS Repository. https://doi.org/10.1007/s10832-007-9161-z||Abstract:||Bilayered ferroelectric thin films consisting of Pb(Zr 0.52Ti0.48)O3 (PZT) and (Bi 3.15Nd0.85)Ti3O12 (BNT) have been successfully synthesized on Pt/Ti/SiO2/Si substrates, via a combined sol-gel and rf-sputtering route. Their ferroelectric and dielectric properties are critically dependent on the phases present, film texture and in particular layer and film thicknesses. Due to the coupling of PZT and BNT bilayers, there requires an optimized thickness combination of the two ferroelectric layers, in order to give rise to the wanted ferroelectric and dielectric properties, while the phenomenon can not be accounted for by the simple series connection model. © 2007 Springer Science+Business Media, LLC.||Source Title:||Journal of Electroceramics||URI:||http://scholarbank.nus.edu.sg/handle/10635/114490||ISSN:||13853449||DOI:||10.1007/s10832-007-9161-z|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 6, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.