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|Title:||Effect of Bi doping on magnetoresistance in La 0.7-x Bi xSr 0.3MnO 3||Authors:||Barik, S.K.
|Issue Date:||Mar-2011||Citation:||Barik, S.K., Mahendiran, R. (2011-03). Effect of Bi doping on magnetoresistance in La 0.7-x Bi xSr 0.3MnO 3. Journal of Nanoscience and Nanotechnology 11 (3) : 2603-2606. ScholarBank@NUS Repository. https://doi.org/10.1166/jnn.2011.2701||Abstract:||It is shown that upon increasing Bi content (x) in La 0.7-xBi xSr 0.3MnO 3, the ground state changes from ferromagnetic metal (x = 0) to charge ordered antiferromagnetic insulator (x > 0.4). The x = 0.3 compound shows unusual magnetic and magnetoresistive properties: it shows hysteresis in magnetization as a function of temperature, field-induced metamagnetic transition in the paramagnetic state, and nearly 100% magnetoresistance. The magnetoresistance as a function of composition at μ 0H = 5 T increases from 38% for x = 0.05 to 99.6% for x = 0.3 and then drops to 60% for x = 0.4. The unusual behavior of x = 0.3 composition is suggested to coexistence of short-range charge-ordered clusters and ferromagnetic domains. The field-induced melting of these charge-ordered clusters leads to large magnetoresista nce effect. © 2011 American Scientific Publishers.||Source Title:||Journal of Nanoscience and Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/114432||ISSN:||15334880||DOI:||10.1166/jnn.2011.2701|
|Appears in Collections:||Staff Publications|
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