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https://doi.org/10.1063/1.3264572
| Title: | Stability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline silicon | Authors: | Dingemans, G. Engelhart, P. Seguin, R. Einsele, F. Hoex, B. Van De Sanden, M.C.M. Kessels, W.M.M. |
Issue Date: | 2009 | Citation: | Dingemans, G., Engelhart, P., Seguin, R., Einsele, F., Hoex, B., Van De Sanden, M.C.M., Kessels, W.M.M. (2009). Stability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline silicon. Journal of Applied Physics 106 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3264572 | Abstract: | The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O 3 was compared with results for thermal SiO2. For Al 2O3 and Al2O3/a -SiNx:H stacks on 2 cm n -type c-Si, ultralow surface recombination velocities of Seff | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/113251 | ISSN: | 00218979 | DOI: | 10.1063/1.3264572 |
| Appears in Collections: | Staff Publications |
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