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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3264572
DC FieldValue
dc.titleStability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline silicon
dc.contributor.authorDingemans, G.
dc.contributor.authorEngelhart, P.
dc.contributor.authorSeguin, R.
dc.contributor.authorEinsele, F.
dc.contributor.authorHoex, B.
dc.contributor.authorVan De Sanden, M.C.M.
dc.contributor.authorKessels, W.M.M.
dc.date.accessioned2014-11-30T06:41:24Z
dc.date.available2014-11-30T06:41:24Z
dc.date.issued2009
dc.identifier.citationDingemans, G., Engelhart, P., Seguin, R., Einsele, F., Hoex, B., Van De Sanden, M.C.M., Kessels, W.M.M. (2009). Stability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline silicon. Journal of Applied Physics 106 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3264572
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/113251
dc.description.abstractThe thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation provided by atomic layer deposited Al2O 3 was compared with results for thermal SiO2. For Al 2O3 and Al2O3/a -SiNx:H stacks on 2 cm n -type c-Si, ultralow surface recombination velocities of Seff
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3264572
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentSOLAR ENERGY RESEARCH INST OF S'PORE
dc.description.doi10.1063/1.3264572
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume106
dc.description.issue11
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000272838600155
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