Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physe.2006.02.004
Title: Effect of screening on the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures
Authors: Feng, Y.P. 
Xu, X. 
Spector, H.N.
Keywords: Excitons
Impurity
Linewidth
Quantum wells
Scattering
Issue Date: Jun-2006
Citation: Feng, Y.P., Xu, X., Spector, H.N. (2006-06). Effect of screening on the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures. Physica E: Low-Dimensional Systems and Nanostructures 33 (1) : 201-206. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physe.2006.02.004
Abstract: We further investigated the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures by taking account of the screening of the exciton-ionized impurity interaction by free carriers. We use the screened Coulomb potential for ionized impurity scattering in quantum wells initially proposed by Hess [Impurity and phonon scattering in layered structures, Appl. Phys. Lett. 35 (1979) 484-486]. Results are presented showing how the screening affects the linewidth at different electric fields and well widths. In most cases, the effect of the screening is to reduce the linewidth below its value in the absence of screening for both the cases of elastic and inelastic scattering of the excitons. However, for wide wells and strong electric fields in the elastic scattering case, it is found that the linewidth increases with increasing screening. The reason for this behavior is discussed. We also find that the magnitude of the linewidth differs depending upon the location of the doping layer relative to the well in the presence of an electric field. © 2006 Elsevier B.V. All rights reserved.
Source Title: Physica E: Low-Dimensional Systems and Nanostructures
URI: http://scholarbank.nus.edu.sg/handle/10635/111376
ISSN: 13869477
DOI: 10.1016/j.physe.2006.02.004
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