Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.physe.2006.02.004
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dc.titleEffect of screening on the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures
dc.contributor.authorFeng, Y.P.
dc.contributor.authorXu, X.
dc.contributor.authorSpector, H.N.
dc.date.accessioned2014-11-28T01:51:30Z
dc.date.available2014-11-28T01:51:30Z
dc.date.issued2006-06
dc.identifier.citationFeng, Y.P., Xu, X., Spector, H.N. (2006-06). Effect of screening on the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures. Physica E: Low-Dimensional Systems and Nanostructures 33 (1) : 201-206. ScholarBank@NUS Repository. https://doi.org/10.1016/j.physe.2006.02.004
dc.identifier.issn13869477
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/111376
dc.description.abstractWe further investigated the electric field dependence of the exciton linewidth due to scattering by ionized impurities in semiconducting quantum well structures by taking account of the screening of the exciton-ionized impurity interaction by free carriers. We use the screened Coulomb potential for ionized impurity scattering in quantum wells initially proposed by Hess [Impurity and phonon scattering in layered structures, Appl. Phys. Lett. 35 (1979) 484-486]. Results are presented showing how the screening affects the linewidth at different electric fields and well widths. In most cases, the effect of the screening is to reduce the linewidth below its value in the absence of screening for both the cases of elastic and inelastic scattering of the excitons. However, for wide wells and strong electric fields in the elastic scattering case, it is found that the linewidth increases with increasing screening. The reason for this behavior is discussed. We also find that the magnitude of the linewidth differs depending upon the location of the doping layer relative to the well in the presence of an electric field. © 2006 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.physe.2006.02.004
dc.sourceScopus
dc.subjectExcitons
dc.subjectImpurity
dc.subjectLinewidth
dc.subjectQuantum wells
dc.subjectScattering
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentTEMASEK LABORATORIES
dc.description.doi10.1016/j.physe.2006.02.004
dc.description.sourcetitlePhysica E: Low-Dimensional Systems and Nanostructures
dc.description.volume33
dc.description.issue1
dc.description.page201-206
dc.description.codenPELNF
dc.identifier.isiut000238492500036
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