Please use this identifier to cite or link to this item:
Title: Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy
Authors: Barnes, G.W.
Tok, E.S. 
Neave, J.H.
Jones, T.S.
Keywords: Growth
Indium phosphide
Molecular beam epitaxy
Semiconducting surfaces
Issue Date: 1-Jun-2003
Citation: Barnes, G.W., Tok, E.S., Neave, J.H., Jones, T.S. (2003-06-01). Phosphorus incorporation during InP(0 0 1) homoepitaxial growth by solid source molecular beam epitaxy. Surface Science 531 (3) : L383-L387. ScholarBank@NUS Repository.
Abstract: The incorporation behaviour of phosphorus (P2) during growth by molecular beam epitaxy of InP thin films on InP(001) substrates has been studied in situ by reflection high energy electron diffraction. The incorporation coefficient of P2 decreases from 0.94 at 360 °C to 0.54 at 470 °C. This behaviour is attributed to the increasing fraction of the incident P2 flux that desorbs from the surface at higher temperatures and does not contribute to layer growth. The low- and temperature-dependent incorporation coefficients imply the need for high P2:In flux ratios and low substrate temperatures for the preparation of smooth InP epitaxial layers. © 2003 Elsevier Science B.V. All rights reserved.
Source Title: Surface Science
ISSN: 00396028
DOI: 10.1016/S0039-6028(03)00535-1
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Oct 22, 2020


checked on Jul 10, 2019

Page view(s)

checked on Oct 10, 2020

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.