Observation of field-effect transistor behavior at self-organized interfaces

Abstract

The method of self-organization used for manufacturing field-effect transistors (FET), was investigated. Low-voltage polymer FETs based on poly(9,9-dialkylfluorene-alt-triarylmine) was used as the p-channel semiconductor, and a 40-60 nm thick crosslinked bisbenzocyclobutene derivative (BCB) was used as the gate dielectric. As the gate dielectric was crosslinked to a network polymer, it was found to integrate with subsequent solvent and thermal processing steps for complex circuits. The results show that this technique produces interfaces which allows to probe the dependence of field-effect mobility on interface microroughness.