Please use this identifier to cite or link to this item: https://doi.org/10.1002/adma.200400392
Title: Observation of field-effect transistor behavior at self-organized interfaces
Authors: Chua, L.-L.
Ho, P.K.H. 
Sirringhaus, H.
Friend, R.H.
Issue Date: 16-Sep-2004
Citation: Chua, L.-L., Ho, P.K.H., Sirringhaus, H., Friend, R.H. (2004-09-16). Observation of field-effect transistor behavior at self-organized interfaces. Advanced Materials 16 (18) : 1609-1615. ScholarBank@NUS Repository. https://doi.org/10.1002/adma.200400392
Abstract: The method of self-organization used for manufacturing field-effect transistors (FET), was investigated. Low-voltage polymer FETs based on poly(9,9-dialkylfluorene-alt-triarylmine) was used as the p-channel semiconductor, and a 40-60 nm thick crosslinked bisbenzocyclobutene derivative (BCB) was used as the gate dielectric. As the gate dielectric was crosslinked to a network polymer, it was found to integrate with subsequent solvent and thermal processing steps for complex circuits. The results show that this technique produces interfaces which allows to probe the dependence of field-effect mobility on interface microroughness.
Source Title: Advanced Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/107147
ISSN: 09359648
DOI: 10.1002/adma.200400392
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