Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1710716
Title: High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors
Authors: Chua, L.-L.
Ho, P.K.H. 
Sirringhaus, H.
Friend, R.H.
Issue Date: 26-Apr-2004
Citation: Chua, L.-L., Ho, P.K.H., Sirringhaus, H., Friend, R.H. (2004-04-26). High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors. Applied Physics Letters 84 (17) : 3400-3402. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1710716
Abstract: The fabrication of gate dielectric layers over the semiconductor layer for polymer field-effect transistors, using a thermal-crosslinkable siloxane bisbenzocyclobutene (BCB), was discussed. It was observed that a surfactant-ion-exchanged PEDT:PSSR (R=long-chain surfactant cation) was used to improve spreading on the low-surface-energy crosslinked-BCB and to suppress channel doping effects. A method to develop thermal bonding of PEDT:PSS onto the BCB surface without using oxygen plasma which caused damage to the dielectric layer was also discussed. It was also observed that the current-electric-field characteristics of metal/BCB/metal structures has scaled the BCB thickness to 10 nm.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/107067
ISSN: 00036951
DOI: 10.1063/1.1710716
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